Diffusion of Tellurium in Silicon

Investigation of tellurium - implanted silicon *

Hall and sheet-resistivity measurements as a function of temperature combined with layer removal have been used to study Si implanted with Teat energies up to 220 keY. At low doses c::S: 4 X l 0 em--'), Te has a donor level with a 140-meV activation energy. The activation energy decreases at higher Te doses and is approximately equal to zero forTe doses<: I 0 cm• At high dose levels, the number...

Tellurium and tellurium compounds

Self-Diffusion in Amorphous Silicon.

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on ^{29}Si/^{nat}Si heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tre...

Extrinsic transient diffusion in silicon

The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion-implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of the opposite type. Analysis of the rela...

On models of phosphorus diffusion in silicon

Various phen?~ena ass~ciated with phosphorus diffusion in silicon are reviewed and prominent ~odel~ are cn~lqued. It IS shown that these models are either fundamentally unsound, or are mconslste~t wl!h observed phenomena. A consistent model is proposed in which two mechanisms are operatmg slmult~neous!~, namely, the. vacancy mechanism for the slower diffusing component, and the mterstltlalcy me...